Pressure dependence of in situ boron-doped silicon films...

Journal of Applied Physics 1989 Vol. 66; Iss. 10

Pressure dependence of in situ boron-doped silicon films prepared by low-pressure chemical vapor deposition. I. Microstructure

Joubert, P., Sarret, M., Haji, L., Hamedi, L., Loisel, B.
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Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343794
File:
PDF, 792 KB
english, 1989
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