Surface roughness in sulfur ion-implanted InP with...

Applied Physics Letters 2005 Vol. 86; Iss. 14

Surface roughness in sulfur ion-implanted InP with molecular beam epitaxy regrown double-heterojunction bipolar transistor layers

Hu, Ting-Chen, Chang, M. F., Weimann, Nils, Chen, Jianxin, Chen, Young-Kai
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Volume:
86
Year:
2005
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1891270
File:
PDF, 399 KB
english, 2005
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