Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2006 Vol. 24; Iss. 5
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Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications
Park, Jae-Wan, Park, Jong-Wan, Jung, Kyooho, Yang, Min Kyu, Lee, Jeon-KookVolume:
24
Year:
2006
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.2244540
File:
PDF, 342 KB
english, 2006