Scaling behavior of hysteresis in multilayer MoS2 field effect transistors
Li, Tao, Du, Gang, Zhang, Baoshun, Zeng, ZhongmingVolume:
105
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4894865
Date:
September, 2014
File:
PDF, 1.71 MB
english, 2014