An analytical charge-based drain current model for nano-scale In 0.52 Al 0.48 As–In 0.53 Ga 0.47 as a separated double-gate HEMT
Rathi, Servin, Jogi, Jyotika, Gupta, Mridula, Gupta, R SVolume:
25
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/25/11/115003
Date:
November, 2010
File:
PDF, 1.05 MB
english, 2010