Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlO[sub x](N) achieved by adjusting Hf∕Al compositional ratio
Kadoshima, Masaru, Ogawa, Arito, Ota, Hiroyuki, Iwamoto, Kunihiko, Takahashi, Masashi, Mise, Nobuyuki, Migita, Shinji, Ikeda, Minoru, Satake, Hideki, Nabatame, Toshihide, Toriumi, AkiraVolume:
99
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2178654
File:
PDF, 480 KB
english, 2006