Control of the saturation value of planar Si doping in...

Journal of Applied Physics 1993 Vol. 73; Iss. 9

Control of the saturation value of planar Si doping in AlInAs layers grown by metalorganic chemical vapor deposition

Ishikawa, Hideto, Nomachi, Ichiro, Miwa, Shiro, Maruyama, Toshiyuki, Kamada, Mikio
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Volume:
73
Year:
1993
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.352747
File:
PDF, 570 KB
english, 1993
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