Etch characteristics of GaN using inductively coupled...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 1998 / 5 Vol. 16; Iss. 3

Etch characteristics of GaN using inductively coupled Cl[sub 2]/Ar and Cl[sub 2]/BCl[sub 3] plasmas

Lee, Y. H.
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Volume:
16
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581173
Date:
May, 1998
File:
PDF, 467 KB
english, 1998
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