[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - 3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications
Ryu, Sei-Hyung, Cheng, Lin, Dhar, Sarit, Capell, Craig, Jonas, Charlotte, Callanan, Robert, Agarwal, Anant, Palmour, John, Lelis, Aivars, Scozzie, Charles, Geil, BruceYear:
2011
Language:
english
DOI:
10.1109/ispsd.2011.5890832
File:
PDF, 622 KB
english, 2011