Depth analysis of phase formation in Si after high-dose Fe...

Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mössbauer spectroscopy

Kruijer, S., Keune, W., Dobler, M., Reuther, H.
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Volume:
70
Year:
1997
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.118996
File:
PDF, 337 KB
english, 1997
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