Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mössbauer spectroscopy
Kruijer, S., Keune, W., Dobler, M., Reuther, H.Volume:
70
Year:
1997
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.118996
File:
PDF, 337 KB
english, 1997