Effect of plasma treatment on the density of defects at an amorphous Si:H-insulator interface
Umezu, Ikurou, Kuwamura, Takahiro, Kitamura, Kazuaki, Tsuchida, Takatsugu, Maeda, KeijiVolume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368249
File:
PDF, 359 KB
english, 1998