[IEEE 1998 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, USA (9-11 June 1998)] 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) - Highly-reliable, low-resistivity bcc-Ta gate MOS technology using low-damage Xe-plasma sputtering and Si-encapsulated silicidation process
Ino, K., Ushiki, T., Kawai, K., Ohshima, L., Shinohara, T., Ohmi, T.Year:
1998
Language:
english
DOI:
10.1109/vlsit.1998.689250
File:
PDF, 227 KB
english, 1998