Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2011 Vol. 29; Iss. 3
High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy
Sawicka, Marta, Feduniewicz-Żmuda, Anna, Turski, Henryk, Siekacz, Marcin, Grzanka, Szymon, Kryśko, Marcin, Dzięcielewski, Igor, Grzegory, Izabella, Skierbiszewski, CzesławVolume:
29
Year:
2011
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.3589228
File:
PDF, 695 KB
english, 2011