Growth of device quality GaN at 550 °C by atomic layer...

Growth of device quality GaN at 550 °C by atomic layer epitaxy

Karam, N. H., Parodos, T., Colter, P., McNulty, D., Rowland, W., Schetzina, J., El-Masry, N., Bedair, Salah M.

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Volume:

Year:

1995

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.115519

File:

PDF, 348 KB

english, 1995

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