Growth of silicon and germanium on Cu(111) studied by...

Physical Review B 1990 / 6 Vol. 41; Iss. 17

Growth of silicon and germanium on Cu(111) studied by angle-resolved direct and inverse photoemission

Dudde, R., Bernhoff, H., Reihl, B.
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Volume:
41
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.41.12029
Date:
June, 1990
File:
PDF, 340 KB
english, 1990
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