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[IEEE 2014 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2014.6.9-2014.6.12)] 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers - Undoped Ge0.92Sn0.08 quantum well PMOSFETs on (001), (011) and (111) substrates with in situ Si2H6 passivation: High hole mobility and dependence of performance on orientation
Liu, Mingshan, Han, Genquan, Liu, Yan, Zhang, Chunfu, Wang, Hongjuan, Li, Xiangdong, Zhang, Jincheng, Cheng, Buwen, Hao, YueYear:
2014
Language:
english
DOI:
10.1109/vlsit.2014.6894376
File:
PDF, 1.49 MB
english, 2014