Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs
Bernholc, J., Pantelides, Sokrates T.Volume:
18
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.18.1780
Date:
August, 1978
File:
PDF, 826 KB
english, 1978