Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO[sub 2] thin films
McPherson, J. W., Mogul, H. C.Volume:
84
Year:
1998
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.368217
File:
PDF, 449 KB
english, 1998