In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111)
Vézian, S., Massies, J., Semond, F., Grandjean, N., Vennéguès, P.Volume:
61
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.61.7618
Date:
March, 2000
File:
PDF, 580 KB
english, 2000