High-current AlGaN/GaN high electron mobility transistors...

physica status solidi (a) 2014 / 01 Vol. 211; Iss. 1

High-current AlGaN/GaN high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy

Pang, Liang, Krein, Philip, Kim, Ki-Won, Lee, Jung-Hee, Kim, Kyekyoon Kevin
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Volume:
211
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201330157
Date:
January, 2014
File:
PDF, 275 KB
english, 2014
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