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Physical integrated diffusion-oxidation model for implanted nitrogen in silicon
Adam, Lahir Shaik, Law, Mark E., Dokumaci, Omer, Hegde, SuriVolume:
91
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1430537
File:
PDF, 328 KB
english, 2002