[IEEE 2010 3rd Electronic System-Integration Technology Conference (ESTC) - Berlin, Germany (2010.09.13-2010.09.16)] 3rd Electronics System Integration Technology Conference ESTC - Simulation and parameters optimization of power DMOS Trench Field Effect Transistors
Baranov, Valentine V., Belous, Anatoly I., Krechko, Michail M., Roubtsevich, Ivan I., Tourtsevich, Arkady S.Year:
2010
Language:
english
DOI:
10.1109/estc.2010.5642831
File:
PDF, 928 KB
english, 2010