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[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - Unique ESD failure mechanism of high voltage LDMOS transistors for very fast transients
Goyal, Abhijat, Whitfield, Jim, Changsoo Hong,, Gill, Chai, Rouying Zhan, Carol, Kushner, Vadim, Gendron, Amaury, Contractor, ShirazYear:
2008
Language:
english
DOI:
10.1109/relphy.2008.4558982
File:
PDF, 1.11 MB
english, 2008