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Crystal anisotropy effects on the weak-localization magnetoresistance of a III-V semiconductor quantum well in a magnetic field parallel to interfaces
Mal’shukov, A. G., Froltsov, V. A., Chao, K. A.Volume:
59
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.59.5702
Date:
February, 1999
File:
PDF, 192 KB
english, 1999