Effect of an AlN buffer layer on the epitaxial growth of...

Applied Physics Letters 2001 Vol. 79; Iss. 10

Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

Lu, Hai, Schaff, William J., Hwang, Jeonghyun, Wu, Hong, Koley, Goutam, Eastman, Lester F.
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Volume:
79
Year:
2001
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1402649
File:
PDF, 399 KB
english, 2001
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