Characterization of the Stability of Current Gain and...

IEEE Transactions on Electron Devices 2012 / 10 Vol. 59; Iss. 10

Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

Sundaresan, Siddarth G., Soe, Aye-Mya, Jeliazkov, Stoyan, Singh, Ranbir
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2210048
Date:
October, 2012
File:
PDF, 1.06 MB
english, 2012
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