Reduction of secondary defect formation in MeV B+...

Reduction of secondary defect formation in MeV B+ ion-implanted Si (100)

Lu, W. X., Qian, Y. H., Tian, R. H., Wang, Z. L., Schreutelkamp, R. J., Liefting, J. R., Saris, F. W.

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Volume:

Year:

1989

Language:

english

Journal:

Applied Physics Letters

DOI:

10.1063/1.102181

File:

PDF, 696 KB

english, 1989

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