[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Random charge effects for PMOS NBTI in ultra-small gate area devices
Agostinelli, M., Pae, S., Yang, W., Prasad, C., Kencke, D., Ramey, S., Snyder, E., Kashyap, S., Jones, M.Year:
2005
Language:
english
DOI:
10.1109/relphy.2005.1493141
File:
PDF, 578 KB
english, 2005