Characteristics of TiN gate metal-oxide-semiconductor field...

Characteristics of TiN gate metal-oxide-semiconductor field effect transistors

Wittmer, M., Noser, J. R., Melchior, H.
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Volume:
54
Year:
1983
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.332167
File:
PDF, 734 KB
english, 1983
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