Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer
Chen, P., Feng, M. X., Jiang, D. S., Zhao, D. G., Liu, Z. S., Li, L., Wu, L. L., Le, L. C., Zhu, J. J., Wang, H., Zhang, S. M., Yang, H.Volume:
112
Year:
2012
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4768287
File:
PDF, 1.29 MB
english, 2012