Ultrathin Ta[sub 2]O[sub 5] film growth by chemical vapor deposition of Ta(N(CH[sub 3])[sub 2])[sub 5] and O[sub 2] on bare and SiO[sub x]N[sub y]-passivated Si(100) for gate dielectric applications
Son, K.-A.Volume:
16
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.581140
Date:
May, 1998
File:
PDF, 392 KB
english, 1998