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Properties of metal-insulator transition and electron spin relaxation in GaN:Si
Wolos, A., Wilamowski, Z., Piersa, M., Strupinski, W., Lucznik, B., Grzegory, I., Porowski, S.Volume:
83
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.83.165206
Date:
April, 2011
File:
PDF, 607 KB
english, 2011