Formation of interface traps in metal-oxide-semiconductor...

Journal of Applied Physics 1991 Vol. 70; Iss. 12

Formation of interface traps in metal-oxide-semiconductor devices during isochronal annealing after irradiation at 78 K

Saks, N. S., Klein, R. B., Yoon, S., Griscom, D. L.
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Volume:
70
Year:
1991
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.349739
File:
PDF, 1.49 MB
english, 1991
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