Study of electric field enhanced emission rates of an...

Journal of Applied Physics 2010 Vol. 108; Iss. 10

Study of electric field enhanced emission rates of an electron trap in n-type GaN grown by hydride vapor phase epitaxy

Ashraf, H., Arshad, M. Imran, Faraz, S. M., Wahab, Q., Hageman, P. R., Asghar, M.
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Volume:
108
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3499669
File:
PDF, 540 KB
english, 2010
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