[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - A more CMOS process compatible scheme to tune the Schottky Barrier Height of NiSi to electrons by means of dopant segregation (DS) technique
Deng, Jian, Luo, Jun, Zhao, Chao, Li, Junfeng, Wang, Wenwu, Chen, Dapeng, Ye, Tianchun, Wu, HanmingYear:
2012
Language:
english
DOI:
10.1109/icsict.2012.6467834
File:
PDF, 497 KB
english, 2012