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[IEEE 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC) - Hong Kong (2010.12.15-2010.12.17)] 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Effect of single HALO doped channel in Tunnel FETs: A 2-D modeling study
Syamal, B, Bose, C, Sarkar, C K, Mohankumar, NYear:
2010
Language:
english
DOI:
10.1109/edssc.2010.5713712
File:
PDF, 1.24 MB
english, 2010