Strain relaxation of thin Si[sub 0.6]Ge[sub 0.4] grown with low-temperature buffers by molecular beam epitaxy
Zhao, M., Hansson, G. V., Ni, W.-X.Volume:
105
Year:
2009
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3091266
File:
PDF, 1.74 MB
english, 2009