![](/img/cover-not-exists.png)
Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature
Hopf, T., Vassilevski, K. V., Escobedo-Cousin, E., King, P. J., Wright, N. G., O'Neill, A. G., Horsfall, A. B., Goss, J. P., Wells, G. H., Hunt, M. R. C.Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4898562
Date:
October, 2014
File:
PDF, 1.87 MB
english, 2014