Dirac point and transconductance of top-gated graphene...

Journal of Applied Physics 2014 / 10 Vol. 116; Iss. 15

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

Hopf, T., Vassilevski, K. V., Escobedo-Cousin, E., King, P. J., Wright, N. G., O'Neill, A. G., Horsfall, A. B., Goss, J. P., Wells, G. H., Hunt, M. R. C.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4898562
Date:
October, 2014
File:
PDF, 1.87 MB
english, 2014
Conversion to is in progress
Conversion to is failed