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[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - The influence of source and drain junction depth on the sub-50nm MOSFET devices
Su-zhen, Luan, Hong-xia, Liu, Yue, HaoYear:
2006
Language:
english
DOI:
10.1109/icsict.2006.306180
File:
PDF, 65 KB
english, 2006