Polarization modification in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
Tao, Y. B., Chen, Z. Z., Zhang, F. F., Jia, C. Y., Qi, S. L., Yu, T. J., Kang, X. N., Yang, Z. J., You, L. P., Yu, D. P., Zhang, G. Y.Volume:
107
Year:
2010
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3374686
File:
PDF, 747 KB
english, 2010