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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT
Bae, Jong-Ho, Hwang, Sunkyu, Shin, Jongmin, Kwon, Hyuck-In, Park, Chan Hyeong, Choi, Hyoji, Park, Jong-Bong, Kim, Jongseob, Ha, Jongbong, Park, Kiyeol, Oh, Jaejoon, Shin, Jaikwang, Chung, U-In, Seo, KYear:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724733
File:
PDF, 824 KB
english, 2013