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Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
Chang, Yao-Feng, Fowler, Burt, Chen, Ying-Chen, Chen, Yen-Ting, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C.Volume:
116
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4891244
Date:
July, 2014
File:
PDF, 3.19 MB
english, 2014