POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN...

POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON

Davies, D. Eirug
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Volume:
14
Year:
1969
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.1652790
File:
PDF, 466 KB
english, 1969
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