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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - High performance Ge pMOS devices using a Si-compatible process flow
Zimmerman, P, Nicholas, G, De Jaeger, B, Kaczer, B, Stesmans, A, Ragnarsson, L-A, Brunco, D P, Leys, F E, Caymax, M, Winderickx, G, Opsomer, K, Meuris, M, Heyns, M MYear:
2006
Language:
english
DOI:
10.1109/iedm.2006.346870
File:
PDF, 387 KB
english, 2006