Annealing of the deep recombination center in GaInP/AlGaInP...

Journal of Applied Physics 1999 Vol. 86; Iss. 7

Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy

Dekker, J., Tukiainen, A., Xiang, N., Orsila, S., Saarinen, M., Toivonen, M., Pessa, M., Tkachenko, N., Lemmetyinen, H.
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Volume:
86
Year:
1999
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.371283
File:
PDF, 300 KB
english, 1999
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