Indium gallium arsenide antimonide photodetector grown by...

Materials Science in Semiconductor Processing 2015 / 03 Vol. 31

Indium gallium arsenide antimonide photodetector grown by liquid phase epitaxy: Electrical characterization and optical response

Hurtado-Castañeda, D.M., Herrera-Pérez, J.L., Arias-Cerón, J.S., Reyes-Betanzo, C., Rodriguez-Fragoso, P., Mendoza-Álvarez, J.G.
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Volume:
31
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2014.11.023
Date:
March, 2015
File:
PDF, 1.10 MB
english, 2015
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