Elevated temperature reactive ion etching of GaAs and...

Journal of Applied Physics 1989 Vol. 66; Iss. 10

Elevated temperature reactive ion etching of GaAs and AlGaAs in C2H6/H2

Pearton, S. J., Hobson, W. S.
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Volume:
66
Year:
1989
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.343774
File:
PDF, 1.18 MB
english, 1989
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