Effect of nitridation on the growth of GaN on ZrB[sub...

Journal of Applied Physics 2006 Vol. 100; Iss. 3

Effect of nitridation on the growth of GaN on ZrB[sub 2](0001)∕Si(111) by molecular-beam epitaxy

Wang, Zhi-Tao, Yamada-Takamura, Y., Fujikawa, Y., Sakurai, T., Xue, Q. K., Tolle, J., Kouvetakis, J., Tsong, I. S. T.
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Volume:
100
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2218763
File:
PDF, 917 KB
english, 2006
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