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[IEEE 2009 67th Annual Device Research Conference (DRC) - University Park, PA, USA (2009.06.22-2009.06.24)] 2009 Device Research Conference - Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications
Pawlik, D. J., Thomas, P., Barth, M., Johnson, K., Rommel, S.L., Mookerjea, S., Datta, S., Luisier, M., Klimeck, G., Cheng, Z., Li, J., Park, J.S., Hydrick, J.M., Fiorenza, J.G., Lochtefeld, A.Year:
2009
DOI:
10.1109/drc.2009.5354892
File:
PDF, 236 KB
2009