Annealing-temperature dependence: Mechanism of Hf...

Journal of Applied Physics 2006 Vol. 99; Iss. 1

Annealing-temperature dependence: Mechanism of Hf silicidation in HfO[sub 2] gate insulators on Si by core-level photoemission spectroscopy

Toyoda, S., Okabayashi, J., Takahashi, H., Kumigashira, H., Oshima, M., Niwa, M., Usuda, K., Liu, G. L.
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Volume:
99
Year:
2006
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2150600
File:
PDF, 672 KB
english, 2006
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